Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.

[1]  Robert W. Dutton,et al.  Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique , 1995 .

[2]  Zhiping Yu,et al.  Virtual instruments for development of high performance circuit technologies , 1995, Proceedings of the IEEE 1995 Custom Integrated Circuits Conference.

[3]  Alberto L. Sangiovanni-Vincentelli,et al.  Simulation of Nonlinear Circuits in the Frequency Domain , 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[4]  Zhiping Yu,et al.  Relaxation-based harmonic balance technique for semiconductor device simulation , 1995, Proceedings of IEEE International Conference on Computer Aided Design (ICCAD).

[5]  G. Sorkin,et al.  Applying harmonic balance to almost-periodic circuits , 1988 .