Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling

Abstract In ULSI multilevel metallizations the via bottom is the main region for the appearance of local stress. This local stress can lead to fractures or porous spots. Out of this concerning the local stress distribution the via bottom region has to be investigated. Due to various technological processes the via shape especially the via bottom geometries are different. In this paper FE-Simulations with respect to the different via bottom geometries and different temperatures of the process steps will be presented. The best via bottom geometry is figured out. The submodeling technique in ANSYS ® is used for these investigations for reduction of simulation time and precise results. The thickness of the barrier has also an influence on the mechanical stress and will be also investigated.

[1]  Kirsten Weide-Zaage,et al.  Simulation of migration effects in nanoscaled copper metallizations , 2008, Microelectron. Reliab..

[2]  D. Vigar,et al.  Stress migration reliability of wide Cu interconnects with gouging vias , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[3]  Joe W. McPherson,et al.  Stress-induced voiding under vias connected to wide Cu metal leads , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[4]  Kirsten Weide-Zaage,et al.  Determination of migration effects in Cu-via structures with respect to process-induced stress , 2008, Microelectron. Reliab..

[5]  J. Gill,et al.  Reliability Challenges in Copper Metallizations arising with the PVD Resputter Liner Engineering for 65nm and Beyond , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[7]  S. Loh,et al.  Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing , 2002, Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects.

[8]  Kirsten Weide-Zaage,et al.  Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanisms , 2003 .

[9]  F. Feustel,et al.  Investigation of via Bottom Barrier Integrity Impact on Electromigration , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[10]  Robert Ballantyne Ross,et al.  Metallic Materials Specification Handbook , 1972 .