A 0.18‐μm 3.1–4.8 GHz CMOS wideband LNA for UWB system

We have proposed a 3.1–4.8 GHz CMOS wideband low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18-μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband LNA exhibits a noise figure of 3.3–3.7 dB, a gain of 12.8–13.9 dB, and an input/output return loss higher then 9.4/7.3 dB. The input IP3 (IIP3) at 4.1 GHz is +1.25 dBm, and consumes 16.5 mW of power. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2368–2371, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23664

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