论文信息 - Process modification to reduce damage to reactive ion etched surfaces

Process modification to reduce damage to reactive ion etched surfaces

An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N2 reduces the surface damage during reactive ion etching of silicon in a SF6 + O2 plasma even though the N2 additive improved the etch rate and selectivity by 44 - 64%.

[1] H. F. Winters,et al. Surface Science Aspects of Etching Reactions , 1992 .

[2] J. R. Brews,et al. Instrumentation and analog implementation of the Q-C method for MOS measurements , 1984 .

[3] Gottlieb S. Oehrlein,et al. Dry etching damage of silicon: A review , 1989 .

[4] J. Barbolla,et al. Rie-induced damage in MOS structures , 1990 .

[5] V. Premachandran. Enhanced silicon etching in nitrogen‐containing SF6‐O2 plasma , 1991 .

[6] G. Oehrlein. Effects of ion bombardment in plasma etching on the fluorinated silicon surface layer: Real‐time and postplasma surface studies , 1993 .

[7] Harold F. Winters,et al. Surface Science Aspects of Etching Reactions , 1992 .

[8] V. Premachandran. Enhanced etching of silicon in CF4-O2-N2 plasma , 1990 .

[9] S. M. Sze. Physics of semiconductor devices /2nd edition/ , 1981 .

[10] D. M. Boulin,et al. Digital implementation of the Q-C method for MOS measurements , 1984 .

[11] J. McVittie,et al. A model and experiments for thin oxide damage from wafer charging in magnetron plasmas , 1992, IEEE Electron Device Letters.

[12] Calvin T. Gabriel,et al. How plasma etching damages thin gate oxides , 1992 .

[13] S. Ashok,et al. A Schottky barrier study of HBr magnetron enhanced reactive ion etching damage in silicon , 1991 .

[14] Surface charging effects on etching profiles , 1992, 1992 International Technical Digest on Electron Devices Meeting.