1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R<sub>ON,SP</sub> (5.12 mQ · cm<sup>2</sup>), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV<sup>2</sup>/R<sub>ON,SP</sub> of 727 MW · cm<sup>-2</sup>. The record high BV of 1.9 kV is attributed to the dual field-plate structure.

[1]  Timothy Boles,et al.  >1200 V GaN-on-silicon Schottky diode , 2013 .

[2]  Jung-Hee Lee,et al.  AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature , 2013, IEEE Transactions on Electron Devices.

[3]  S. Hsu,et al.  AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking , 2013, IEEE Electron Device Letters.

[4]  Yu Cao,et al.  Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy , 2011 .

[5]  Dirk Wellekens,et al.  Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination , 2013, IEEE Electron Device Letters.

[6]  T. Egawa,et al.  High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[7]  M. Han,et al.  High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[8]  T. Palacios,et al.  GaN-on-Si Vertical Schottky and p-n Diodes , 2014, IEEE Electron Device Letters.

[9]  S. Pearton,et al.  Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes , 2010 .

[10]  B. J. Baliga,et al.  Planar Nearly Ideal Edge-Termination Technique for GaN Devices , 2011, IEEE Electron Device Letters.

[11]  K. Seo,et al.  Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode , 2013, IEEE Electron Device Letters.

[12]  Koji Katayama,et al.  Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates , 2010 .

[13]  M. Kiyama,et al.  High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates , 2007 .

[14]  Joan M. Redwing,et al.  Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage , 2001 .

[15]  W. Jeon,et al.  1kV AlGaN/GaN power SBDs with reduced on resistances , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[16]  A. Chini,et al.  High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates , 2004, IEEE Electron Device Letters.

[17]  C. Meliani,et al.  Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking , 2012, IEEE Electron Device Letters.

[18]  S. S. Park,et al.  Vertical and lateral GaN rectifiers on free-standing GaN substrates , 2001 .

[19]  AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact , 2012 .

[20]  Wei Huang,et al.  High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors , 2008 .

[21]  K. Evans,et al.  Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate , 2011 .