2-22 GHz low phase noise silicon bipolar YIG tuned oscillator using composite feedback
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The authors present a fundamental YIG tuned oscillator which covers the frequency range of 2 to 22 GHz, using a high-frequency silicon bipolar transistor and a single YIG sphere. A unique composite feedback approach has been utilized to demonstrate a minimum of 10-dBm power output and phase noise of -95 dBc/Hz at 10 kHz across most of the band. The design approach and performance results of this widest-band and low-noise oscillator are described.<<ETX>>
[1] J. Obregon,et al. Decade Bandwidth FET Functions , 1981, 1981 IEEE MTT-S International Microwave Symposium Digest.
[2] D. Kaminsky,et al. An Ultra Broad Band Dual YIG Oscillator , 1985, 1985 15th European Microwave Conference.
[3] C. Schiebold. An Approach to Realizing Multi-Octave Performance in GaAs-FET YIG-Tuned Oscillators , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.