论文信息 - Simulation of heavy-ion-induced failure modes in nMOS cells of ICs

Simulation of heavy-ion-induced failure modes in nMOS cells of ICs

Simulation results show leakage current induced by the impact of a single heavy ion in an nMOSFET's bird's beak accountable for experimentally observed stuck bits. Parametric extrapolation shows dramatic sensitivity increase for recent local oxidation of silicon technologies.

S. Duzellier | T. Nuns | D. Falguere | J.-P. David | J. G. Loquet

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