A 5.7 GHz Hiperlan SiGe BiCMOS voltage-controlled oscillator and phase-locked-loop frequency synthesizer

A SiGe BiCMOS 5.5-6.4 GHz frequency synthesizer is presented. The synthesizer consists of an oscillator with a phase noise of -110 dBc/Hz at 1 MHz offset, and a 10 GHz phase-lock-loop circuit with an in-band phase noise of -79 dBc/Hz. The power consumption of the ICs was 9 mW and 17 mW, respectively.

[1]  W. Klein,et al.  Ramp-up of first SiGe circuits for mobile communications: positioning of SiGe vs. GaAs and silicon , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[2]  Herschel A. Ainspan,et al.  A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[3]  B.-U. Klepser SiGe bipolar 5.5 GHz dual-modulus prescaler , 1999 .