Ultrathin InAs-channel MOSFETs on Si substrates

Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (Lg) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm Lg show high transconductance, ~2.0 mS/μm at VDS=0.5V.