Analysis and Simulation of Temperature Characteristic of Sensitivity for SOI Lateral PIN Photodiode Gated by Transparent Electrode

This paper performs the structure and principle of SOI Lateral PIN photodiode Gated by Transparent Electrode. The temperature models of photocurrent and dark current are presented and validated by 2D ATLAS simulation. The variation of temperature on sensitivity is addressed when the LPIN PD-GTE is fully depleted. In contrast, the same work is presented on SOI Lateral PIN photo diode. The simulated results indicate the internal quantum efficiency of SOI LPIN PD-GTE remains about (95 %) with illumination of 400 nm wavelength as the temperature rises while the signal-noise-ratio decreases. SNR achieves \(10^7\) at 300 K and decreases to \(10^3\) at 473 K. FHWM is almost unchanged varing the temperatures. Thus, the sensitivity decreases when the temperature rises. Still, considering the fact that the operating temperature of the device generally cannot be 473 K or higher, SOI Lateral PD-GTE can be used at high temperature with good sensitivity.