Scaling analysis of Phase Change Memory (PCM) driving devices

The scalability of PN diode and Field Effect Transistor (FETs) as a Phase Change Memory (PCM) driving device is investigated in this work. The study is carried using vertical Gate-All-Around (GAA) MOSFETs with the same cross-sectional channel geometry as the PN diodes. Through extensive 3-D device simulations from 90nm down to 22nm technology node, it is shown that both PN diode and cylindrical GAA MOSFET can supply the required driving current for the PCRAM cell down in all technology nodes. As a general rule, PN diode as PCM driving device is superior to GAA MOSFET at larger technology nodes while the superiority become negligible as the technology node is scaled further down the roadmap. In addition, the scaling effects on cross-talk issues of driving devices are also investigated.

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