A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification

Here, we report the synthesis of a vertical MoSe2/WSe2 p–n heterostructure using a sputtering-CVD method. Unlike the conventional CVD method, this method produced a continuous MoSe2/WSe2 p–n heterostructure. WSe2 and MoSe2 back-gated field effect transistors (FETs) exhibited good gate modulation behavior, and high hole and electron mobilities of ∼2.2 and ∼15.1 cm2 V−1 s−1, respectively. The fabricated vertical MoSe2/WSe2 p–n diode showed rectifying I–V behavior with back-gate tunability. The rectification ratio of the diode was increased with increasing gate voltage, and was increased from ∼18 to ∼1600 as the gate bias increased from −40 V to +40 V. This is attributed to the fact that the barrier height between p-WSe2 and n-MoSe2 is modulated due to the back-gate bias. The rectification ratio is higher than the previously reported values for the TMDC p–n heterostructure grown by CVD.

[1]  R. Vargas-Bernal.  Graphene against Other Two-Dimensional Materials: A Comparative Study on the Basis of Photonic Applications , 2016 .

[2]  M. Iqbal,et al.  Layer-modulated, wafer scale and continuous ultra-thin WS2 films grown by RF sputtering via post-deposition annealing , 2016 .

[3]  Hao Li,et al.  Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction , 2016 .

[4]  J. Eom,et al.  Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering. , 2016, Nanoscale.

[5]  L. Xie,et al.  Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications. , 2015, Nanoscale.

[6]  H. Jeong,et al.  Chemical Vapor Deposition of Large‐Sized Hexagonal WSe2 Crystals on Dielectric Substrates , 2015, Advanced materials.

[7]  Jiannong Wang,et al.  A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy. , 2015, Nanoscale.

[8]  L. Chu,et al.  Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals , 2015, 1509.00555.

[9]  Xiaodong Xu,et al.  Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. , 2015, Chemical Society reviews.

[10]  Jung Ho Yu,et al.  Vertical heterostructure of two-dimensional MoS₂ and WSe₂ with vertically aligned layers. , 2015, Nano letters.

[11]  Jun Lou,et al.  Vertical and in-plane heterostructures from WS2/MoS2 monolayers. , 2014, Nature materials.

[12]  X. Duan,et al.  Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers , 2014, Nano letters.

[13]  J. Robinson,et al.  Large‐Area Synthesis of Continuous and Uniform MoS2 Monolayer Films on Graphene , 2014 .

[14]  Kenji Watanabe,et al.  Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride. , 2014, ACS nano.

[15]  Chi Won Ahn,et al.  Large-area single-layer MoSe2 and its van der Waals heterostructures. , 2014, ACS nano.

[16]  P. Ajayan,et al.  Chemical vapor deposition growth of crystalline monolayer MoSe2. , 2014, ACS nano.

[17]  S. Pantelides,et al.  Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. , 2014, Nano letters.

[18]  A. M. van der Zande,et al.  Atomically thin p-n junctions with van der Waals heterointerfaces. , 2014, Nature nanotechnology.

[19]  Jing Guo,et al.  Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. , 2013, Nano letters.

[20]  Hua Zhang,et al.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. , 2013, Nature chemistry.

[21]  Janna Börner,et al.  Real-time imaging of methane gas leaks using a single-pixel camera. , 2017, Optics express.

[22]  L. Chu,et al.  Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.

[23]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[24]  A. Ramasubramaniam.  Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides , 2012 .

[25]  Kinam Kim,et al.  High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.

[26]  Branimir Radisavljevic,et al.  Integrated circuits and logic operations based on single-layer MoS2. , 2011, ACS nano.

[27]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[28]  A. Nelson,et al.  Characterization of MoSe2(0001) and ion-sputtered MoSe2 by XPS , 2005 .