Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
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Jin-Hyun Kim | J. Spiegelman | C. Nam | H. S. Kim | S. Hwang | Y. Jung | A. Sahota | Jaidah Mohan | Heber Hernández-Arriaga | Jiyoung Kim | Kihyun Kim | D. Alvarez | Dan N. Le | Rino Choi | S. Kim
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