Dark Current Random Telegraph Signals in Solid-State Image Sensors
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Pierre Magnan | Sylvain Girard | Cedric Virmontois | Vincent Goiffon | Olivier Gilard | Herve Geoffray | Melanie Raine | Mark S. Robbins | Alain Bardoux | Laurie Tauziede | S. Girard | P. Magnan | V. Goiffon | O. Gilard | C. Virmontois | A. Bardoux | M. Raine | L. Tauziède | M. Robbins | H. Geoffray
[1] R. A. Hartmann,et al. Permanent Damage Produced by Single Proton Interactions in Silicon Devices , 1986, IEEE Transactions on Nuclear Science.
[2] W. Rabaud,et al. Radiation Effects in InGaAs and Microbolometer Infrared Sensor Arrays for Space Applications , 2008, IEEE Transactions on Nuclear Science.
[3] O. Gilard,et al. Measurements of Random Telegraph Signal in CCDs Irradiated with Protons and Neutrons , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.
[4] P. Magnan,et al. Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology , 2008, IEEE Transactions on Nuclear Science.
[5] G. R. Hopkinson,et al. Further measurements of random telegraph signals in proton irradiated CCDs , 1995 .
[6] P. Magnan,et al. Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis , 2008, IEEE Transactions on Nuclear Science.
[7] T. Lee,et al. An Active Pixel Sensor Fabricated Using CMOS / CCD Process Technology , 1995 .
[8] Cheryl J. Dale,et al. Displacement damage extremes in silicon depletion regions , 1989 .
[9] Bart Dierickx,et al. Enhanced dark current generation in proton-irradiated CMOS active pixel sensors , 2002 .
[10] J. Wendler,et al. Radiation hardness of two-dimensional focal plane detector arrays for LWIR/VLWIR space sounding missions , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.
[11] P. Magnan,et al. Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology , 2008, 2008 European Conference on Radiation and Its Effects on Components and Systems.
[12] Matthieu Beaumel,et al. Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor , 2010, IEEE Transactions on Nuclear Science.
[13] G. Hopkinson. Radiation effects in a CMOS active pixel sensor , 2000 .
[14] P Martin-Gonthier,et al. Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors , 2011, IEEE Electron Device Letters.
[15] Eric Costard,et al. InGaAs focal plane array developments at III-V Lab , 2012, Defense + Commercial Sensing.
[16] B. Dierickx,et al. Total dose and displacement damage effects in a radiation-hardened CMOS APS , 2003 .
[17] R. Reed,et al. Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe , 2007, IEEE Transactions on Nuclear Science.
[18] M. R. Skokan,et al. Noise Attributes of LWIR HDVIP HgCdTe Detectors , 2008 .
[19] R. Harboe-Sorensen,et al. Radiation effects on a radiation-tolerant CMOS active pixel sensor , 2004, IEEE Transactions on Nuclear Science.
[20] E. Martín,et al. Proton and $\gamma$ -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18-$\mu{\hbox{m}}$ CMOS Image Sensor , 2013, IEEE Transactions on Nuclear Science.
[21] A. Bardoux,et al. Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors , 2011, IEEE Transactions on Nuclear Science.
[22] Shoji Kawahito,et al. Effects of Negative-Bias Operation and Optical Stress on Dark Current in CMOS Image Sensors , 2010, IEEE Transactions on Electron Devices.
[23] G. R. Hopkinson,et al. Random telegraph signals from proton-irradiated CCDs , 1993 .
[24] Pierre Magnan,et al. Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides , 2013, IEEE Transactions on Nuclear Science.