Epitaxially grown GaAsN random laser
暂无分享,去创建一个
Chennupati Jagadish | Hark Hoe Tan | Jin Zou | M. Gal | T. Puzzer | Qiang Gao | H. Tan | C. Jagadish | M. Gal | J. Zou | Q. Gao | T. Puzzer | L. Ouyang | B. Q. Sun | L. Ouyang | B. Sun
[1] D. Wiersma,et al. Light diffusion with gain and random lasers. , 1996, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.
[2] Weikun Ge,et al. Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation , 2001 .
[3] Ray H. Baughman,et al. Laser-like emission in opal photonic crystals , 1999 .
[4] G. Siu,et al. Mie solution of light scattering from spheres of radii up to 80λ with digit-array method , 2002 .
[5] Robert P. H. Chang,et al. Random laser action in semiconductor powder , 1999 .
[6] T. Saiki,et al. Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature , 2001 .
[7] Baoquan Sun,et al. Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures , 2000 .
[8] H. Temkin,et al. Luminescence of as-grown and thermally annealed GaAsN/GaAs , 1998 .
[9] N. Lawandy,et al. Laser action in strongly scattering media , 1994, Nature.
[10] I. Buyanova,et al. Electronic Properties of Ga(In)NAs Alloys , 2001 .
[11] C. W. Tu,et al. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy , 1999 .
[12] H. Tan,et al. On the nature of radiative recombination in GaAsN , 2002 .
[13] Yichao Lin,et al. STRAIN RELAXATION OF GANXAS1-X ON GAAS (001) GROWN BY MOLECULAR-BEAM EPITAXY , 1999 .
[14] Kenichi Iga,et al. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition , 2000 .
[15] Hui Cao,et al. Dynamic response and relaxation oscillations in random lasers , 2002 .