Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM

For the first time, we report that the resistive switching behaviors of the multi-level resistance states can be influenced by the operation mode. Simulations reveal that this is due to the different geometry of the conductive filament in the multi-level resistance states stemmed from the different operation mode. Based on this understanding, improved stability and uniformity of the medium resistance states during switching process are predicted and experimentally verified.