论文信息 - Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound - 字舞流文

Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound

A. Zhukov | A. Kovsh | E. Semenova | V. Ustinov | J. Chi | L. Wei | J. -. Wang

[1] K. Kurihara,et al. Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs , 2001, Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).

[2] S. Saunders,et al. Adaptive antenna array using real symmetric array covariance matrix , 2001 .

[3] Jyh-Shyang Wang,et al. Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy , 2001 .

[4] Henning Riechert,et al. Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500 µW at room temperature , 2001 .

[5] John E. Cunningham,et al. Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 /spl mu/m , 2000 .

[6] S. G. Spruytte,et al. Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers , 2000, IEEE Photonics Technology Letters.

[7] Kent D. Choquette,et al. Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um , 2000 .

[8] Mikhail V. Maximov,et al. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm , 2000 .

[9] Alexey E. Zhukov,et al. GaAs-based long-wavelength lasers , 2000 .

[10] Wladek Walukiewicz,et al. Band Anticrossing in GaInNAs Alloys , 1999 .

[11] Charles W. Tu,et al. Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells , 2000 .