High-reliability flip-chip GaInAs/InP pin photodiode

Lensed, small-junction, flip-chip GaInAs/InP pin photodiodes were fabricated by introducing planar junction and reliable metallisation structures. Low dark current (<100pA), high quantum efficiency (80%) with large fibre alignment tolerance (42 μm) and also large bandwidth (21 GHz) characteristics were achieved. Aging test carried out at 180 °C for 3000 h confirmed their high reliability.