Efficient second harmonic generation of double-end diffusion-bonded Nd:YVO4 self-Raman laser producing 7.9 W yellow light.

A high power and efficient 588 nm yellow light is demonstrated through intracavity frequency doubling of an acousto-optic Q-switched self-frequency Raman laser. A 30-mm-length double-end diffusion-bonded Nd:YVO(4) crystal was utilized for efficient self-Raman laser operation by reducing the thermal effects and increasing the interaction length for the stimulated Raman scattering. A 15-mm-length LBO with non-critical phase matching (theta = 90 degrees, phi = 0 degrees) cut was adopted for efficient second-harmonic generation. The focus position of incident pump light and both the repetition rate and the duty cycle of the Q-switch have been optimized. At a repetition rate of 110 kHz and a duty cycle of 5%, the average power of 588 nm light is up to 7.93 W while the incident pump power is 26.5 W, corresponding to an overall diode-yellow conversion efficiency of 30% and a slope efficiency of 43%.

[1]  Ge Zhang,et al.  Yellow-light generation of 5.7 W by intracavity doubling self-Raman laser of YVO(4)/Nd:YVO(4) composite. , 2009, Optics letters.

[2]  Qingpu Wang,et al.  Diode-side-pumped intracavity frequency-doubled Nd:YAG/BaWO4 Raman laser generating average output power of 3.14 W at 590 nm. , 2007, Optics letters.

[3]  J. Dalibard,et al.  Sum-frequency generation of 589 nm light with near-unit efficiency. , 2008, Optics express.

[4]  Y. Chen,et al.  High-efficiency Q-switched dual-wavelength emission at 1176 and 559 nm with intracavity Raman and sum-frequency generation. , 2009, Optics express.

[5]  P. Dekker,et al.  High efficiency, multi-Watt CW yellow emission from an intracavity-doubled self-Raman laser using Nd:GdVO4. , 2008, Optics express.

[6]  Y. Lan,et al.  Repetition-rate dependence of thermal loading in diode-end-pumped Q-switched lasers: influence of energy-transfer upconversion , 2000 .

[7]  LD-pumped Nd : YAG/LBO 556 nm yellow laser , 2006 .

[8]  J. Piper,et al.  Crystalline Raman Lasers , 2007, IEEE Journal of Selected Topics in Quantum Electronics.

[9]  Y. Chen,et al.  High-power diode-pumped actively Q-switched Nd:YVO4 self-Raman laser: influence of dopant concentration. , 2004, Optics letters.

[10]  Y. Chen,et al.  Comparison of thermal lensing effects between single-end and double-end diffusion-bonded Nd:YVO4 crystals for 4F 3/2-->4I 11/2 and 4F 3/2-->4I 13/2 transitions. , 2008, Optics express.

[11]  James C. Barnes,et al.  Tetragonal vanadates YVO4 and GdVO4 – new efficient χ(3)-materials for Raman lasers , 2001 .

[12]  Huai-jin Zhang,et al.  Efficient diode-end-pumped actively Q-switched Nd:YAG/SrWO4/KTP yellow laser. , 2009, Optics letters.

[13]  Matti Kaivola,et al.  Passively Q-switched Nd:YAG/KTA laser at 561 nm , 2008 .

[14]  David J. Spence,et al.  Wavelength-versatile visible and UV sources based on crystalline Raman lasers , 2008 .