A 2.4 GHz high efficiency SiGe HBT power amplifier with high-Q LTCC harmonic suppression filter

We present a 2.4 GHz SiGe HBT power amplifier integrated with a harmonic suppression filter implemented in a high-Q multilayer low-temperature cofired ceramic (LTCC) substrate at the output. The power amplifier delivers a power of up to 27.5 dBm with a maximum power-added efficiency (PAE) of 47%. It has a power output of 27 dBm at an input power of 0 dBm with a PAE of 45%. The second and third harmonics are -44 dBc and -49 dBc, respectively, at this operating point. The power amplifier exhibits a linear gain of 35 dB and operates at a supply voltage of 3.3 V. To the best of our knowledge, this represents the best reported performance of a SiGe HBT power amplifier at 2.4 GHz and is comparable to performance previously achieved only with GaAs-based processes. The harmonic suppression filter and output match network have been implemented completely in LTCC without the use of external discrete components.

[1]  F. J. Morin,et al.  Electrical Properties of Silicon Containing Arsenic and Boron , 1954 .

[2]  A. Schuppen,et al.  SiGe-power amplifiers in flipchip and packaged technology , 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

[3]  D. Pozar.  Microwave Engineering , 1990 .

[4]  R. T. Dennison,et al.  Local thermal effects in high performance bipolar devices/circuits , 1989, Proceedings of the Bipolar Circuits and Technology Meeting.

[5]  J. Sheen,et al.  A compact semi-lumped low-pass filter for harmonics and spurious suppression , 2000 .

[6]  R. Gotzfried,et al.  RFIC's for mobile communication systems using SiGe bipolar technology , 1998 .

[7]  F. Beisswanger,et al.  Design of RF integrated circuits using SiGe bipolar technology , 1998 .

[8]  R. Gotzfried,et al.  A DECT transceiver chip set using SiGe technology , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[9]  M.F. Chang,et al.  A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications , 2000, IEEE Journal of Solid-State Circuits.

[10]  R. P. Arnold,et al.  A quantitative study of emitter ballasting , 1974 .