K=-BAND MONOLITHIC GaAs POUER FET AMPLIFIERS*

GaAs power MNIC amplifiers with an optimized FET structure operating at Ka–band have achieved a small–signal gain of 4.3 dB and an output pcwer of 481 mkl. These 1.7 x 0.9-MM NMICS include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mU at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of NNICS with on–chip bias and DC blocking at Ka-band.