A review of IGBT models

In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed.

[1]  B. J. Baliga Analysis of insulated gate transistor turn-off characteristics , 1985, IEEE Electron Device Letters.

[2]  Krishna Shenai,et al.  Investigation of the short-circuit performance of an IGBT , 1998 .

[3]  Darko Kovac,et al.  New switching simulation models of power electronic parts as IGBT, MOSFET and power diode , 1994, Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics.

[4]  Kamel Besbes MODELLING AN INSULATED GATE BIPOLAR TRANSISTOR USING BOND GRAPH TECHNIQUES , 1995 .

[5]  I. Rasoanarivo,et al.  A comparative study of high power IGBT model behaviour in voltage source inverter , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[6]  H. A. Mantooth,et al.  Performance requirements for power MOSFET models , 1994 .

[7]  Stephen J. Finney,et al.  Thermal stability of IGBT high-frequency operation , 2000, IEEE Trans. Ind. Electron..

[8]  F. Blaabjerg,et al.  An extended model of power losses in hard-switched IGBT-inverters , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[9]  C. Wong,et al.  EMTP modeling of IGBT dynamic performance for power dissipation estimation , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[10]  A.R. Hefner An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT) , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.

[11]  Pekka Kuivalainen,et al.  Circuit simulation models for MOS-gated power devices: application to the simulation of an electronic lamp ballast circuit , 1993, Proceedings Eighth Annual Applied Power Electronics Conference and Exposition,.

[12]  Bruno Allard,et al.  Transient temperature measurements and modeling of IGBT's under short circuit , 1998 .

[13]  Issa Batarseh,et al.  A steady-state and transient IGBT model valid for all free-carrier injection conditions , 1997, Proceedings of APEC 97 - Applied Power Electronics Conference.

[14]  D. Silber,et al.  A versatile electrical model for IGBT including thermal effects , 1993, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[15]  Kurt Hoffmann,et al.  An analytical model of IGBTs with low emitter efficiency , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[16]  Florin Udrea,et al.  A steady-state analytical model for the trench insulated gate bipolar transistor , 1995, 1995 International Semiconductor Conference. CAS '95 Proceedings.

[17]  Stephen J. Finney,et al.  A new analytical IGBT model with improved electrical characteristics , 1999 .

[18]  Wolfgang Fichtner,et al.  Punch-through IGBTs with homogeneous n-base operating at 4 kV line voltage , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[19]  C. Alonso,et al.  Simulation of short-circuit phenomena in IGBT , 1994 .

[20]  B. J. Baliga,et al.  Modern Power Devices , 1987 .

[21]  Y.-H. Cho,et al.  Parameter extraction for the static and dynamic model of IGBT , 1992, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[22]  A.R. Hefner,et al.  Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) , 1988, Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.

[23]  Jerry G. Fossum,et al.  Network representations of LIGBT structures for CAD of power integrated circuits , 1988 .

[24]  David A. Torrey,et al.  Switching losses of IGBTs under zero-voltage and zero-current switching , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[25]  T. Nilsson The insulated gate bipolar transistor response in different short circuit situations , 2002 .

[26]  C. Hu,et al.  An analytical model for the power bipolar-MOS transistor , 1986 .

[27]  Li Zhang,et al.  IGBT modelling using HSPICE , 1996, V IEEE International Power Electronics Congress Technical Proceedings, CIEP 96.

[28]  Allen R. Hefner,et al.  A dynamic electro-thermal model for the IGBT , 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.

[29]  Khai D. T. Ngo,et al.  Behavioral modeling of the IGBT using the Hammerstein configuration , 1996 .

[30]  D. Lafore,et al.  Analysis of switching behavior of the power insulated gate bipolar transistor by soft modeling , 2002 .

[31]  R. Kraus,et al.  Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model , 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

[32]  S. Clemente,et al.  Transient thermal response of power semiconductors to short power pulses , 1993 .

[33]  Holger Goebel,et al.  A unified method for modeling semiconductor power devices , 1993 .

[34]  K. Board,et al.  Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT) , 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

[35]  Salvatore Musumeci,et al.  PT-IGBT PSpice model with new parameter extraction for life-time and epy dependent behaviour simulation , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[36]  J. Yamashita,et al.  An experimental and numerical study on the forward biased SOA of IGBTs , 1996 .

[37]  W. Gerlach,et al.  Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT , 1995 .

[38]  M.S. Adler,et al.  The insulated gate rectifier (IGR): A new power switching device , 1982, 1982 International Electron Devices Meeting.

[39]  D. Metzner,et al.  A modular concept for the circuit simulation of bipolar power semiconductors , 1994 .

[40]  B. Jayant Baliga,et al.  Analysis of on-state carrier distribution in the DI-LIGBT , 1997 .

[41]  D. Silber,et al.  A user-optimized electro-thermal IGBT model for power electronic circuit simulation in the circuit simulator ELDO , 1996, Proceedings of Applied Power Electronics Conference. APEC '96.

[42]  A. R. Hefner Modeling buffer layer IGBTs for circuit simulation , 1993 .

[43]  Barry W. Williams,et al.  Fast and accurate IGBT model for PSpice , 1996 .

[44]  O. Apeldoorn,et al.  New IGBT model for PSPICE , 2002 .

[45]  Ying-Yu Tzou,et al.  A practical SPICE macro model for the IGBT , 1993, Proceedings of IECON '93 - 19th Annual Conference of IEEE Industrial Electronics.

[46]  A. Monti A fuzzy-based black-box approach to IGBT modelling , 1996, Proceedings of Third International Conference on Electronics, Circuits, and Systems.

[47]  C. S. Mitter,et al.  Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE , 1991, Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting.

[48]  Antonio G. M. Strollo,et al.  A new IGBT circuit model for SPICE simulation , 1997, PESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 1970-71. Power Processing and Electronic Specialists Conference 1972.

[49]  A. R. Hefner An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT) , 1989, 20th Annual IEEE Power Electronics Specialists Conference.

[50]  H. A. Mantooth,et al.  Electro-thermal simulation of an IGBT PWM inverter , 1993, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[51]  S. Lefebvre,et al.  Maximum switching frequency choice for IGBT used in ZCS mode , 2002 .

[52]  Jin-Hau Kuo,et al.  Turn-on transient analysis of a power IGBT with an inductive load in series with a resistive load , 1994 .

[53]  J. P. Keradec,et al.  Experimental characterization of insulated gate power components: capacitive aspects , 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

[54]  Juli Yamashita,et al.  A relation between dynamic saturation characteristics and tail current of nonpunchthrough IGBT , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[55]  Bruno Allard,et al.  Rules for deriving basic semiconductor region models , 1994, Proceedings of 1994 Power Electronics Specialist Conference - PESC'94.

[56]  Jerry G. Fossum,et al.  Physical DMOST modeling for high-voltage IC CAD , 1990 .

[57]  Paolo Spirito,et al.  Two-dimensional modeling of on state voltage drop in IGBT , 1997, 1997 21st International Conference on Microelectronics. Proceedings.

[58]  Florin Udrea,et al.  A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT) , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[59]  D. Divan,et al.  Switching dynamics of IGBTs in soft-switching converters , 1995 .

[60]  Florin Udrea,et al.  An on-state analytical model for the Trench Insulated Gate Bipolar Transistor (TIGBT) , 1997 .

[61]  A. R. Hefner,et al.  An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991 .

[62]  V. A. Kuz'min,et al.  Analysis and simulation of insulated gate bipolar transistor with buffer n'-layer , 1994 .

[63]  Krishna Shenai,et al.  Critical evaluation of IGBT performance in zero current switching environment , 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

[64]  T.P. Chow,et al.  An analytical IGBT model for power circuit simulation , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[65]  K. Jezernik,et al.  IGBT SPICE model , 1995, IEEE Trans. Ind. Electron..

[66]  Akio Nakagawa,et al.  Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[67]  T.P. Chow,et al.  Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[68]  T. Rogne,et al.  Models for simulation of diode (and IGBT) switchings which include the effect of the depletion layer , 1993, Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting.

[69]  I. Omura,et al.  IGBT negative gate capacitance and related instability effects , 1997, IEEE Electron Device Letters.

[70]  D.-S. Kuo,et al.  Modeling the turn-off characteristics of the bipolar-MOS transistor , 1985, IEEE Electron Device Letters.