论文信息 - Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

[1] I. Ferguson,et al. The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode , 2008 .

[2] Martin Hÿtch,et al. Quantitative measurement of displacement and strain fields from HREM micrographs , 1998 .

[3] E. Schubert,et al. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop , 2008 .

[4] Matthew D. McCluskey,et al. Interdiffusion of In and Ga in InGaN quantum wells , 1998 .

[5] Joon Seop Kwak,et al. Recent progress of high power GaN‐based violet laser diodes , 2003 .

[6] J. Sheu,et al. Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer , 2001, IEEE Photonics Technology Letters.

[7] A. Benninghoven,et al. Secondary ion mass spectrometry : SIMS V : proceedings of the fifth international conference, Washington, DC, September 30-October 4, 1985 , 1986 .

[8] C. W. Magee,et al. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis , 1989 .

[9] Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures , 2002 .

[10] Masao Ikeda,et al. Degradation in AlGaInN lasers , 2003 .

[11] Hadis Morkoç,et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .