A unified physics based capacitance model for MOSFETs suitable for implementation in circuit simulators is presented. This model is based on the charge conserving, so-called Meyer-like approach proposed by Turchetti et al., and utilizes a unified charge control model to assure a continuous description of the MOSFET capacitances both above and below threshold. The capacitances associated with the model are comparable to those of the well-known BSIM model in the above-threshold regime, but it is more precise in the description of near-threshold and subthreshold behaviour. Moreover, the discontinuities at the transitions between the various regimes of operation are removed. The present modelling scheme was implemented in our circuit simulator AIM-Spice, and simulations of the dynamic behaviour of various demanding benchmark circuits clearly reveal its superiority over simulations using the simple Meyer model.
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