论文信息 - A 1.2V, 10MHz, low-pass Gm-C filter with Gm-cells based on triode-biased MOS and passive resistor in 0.13/spl mu/m CMOS technology

A 1.2V, 10MHz, low-pass Gm-C filter with Gm-cells based on triode-biased MOS and passive resistor in 0.13/spl mu/m CMOS technology

A 1.2V 10MHz low-pass Gm-C filter implemented with low-voltage Gm-cell based on passive resistor and triode-region MOSFET is described. The Gm-cell converts the input voltage to the output current by passive resistor for wider signal swing. For low-voltage operation, triode-region MOS transistors are widely used while the output resistance is improved by regulated gate cascode circuit. The 10MHz low-pass Gm-C filter was implemented in a 0.13/spl mu/m CMOS technology and the measured input third order intercept point is 3dBV and 9.5dBV, respectively for in-band and out-of-band input.

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