Growth of n‐ and p‐type Al(As)Sb by metalorganic chemical vapor deposition

AlSb and AlAsxSb1−x epitaxial films grown by metalorganic chemical vapor deposition were successfully doped p‐ or n‐type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 ° C and 76 Torr using trimethylamine alane and triethylantimony. AlAs0.16Sb0.84 films lattice matched to InAs were grown at 600 ° C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2×1018 and 6×1018 cm−3, respectively, for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn‐doped AlAs0.16Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between 1×1017 to 5×1018 cm−3 for Zn‐doped material and electron concentrations in the low to mid‐ 1018 cm−3 for Sn‐doped material.