A high performance intelligent IGBT with overcurrent protection

We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm/sup 2/. The turn-off fall time is 0.28 /spl mu/s. This trade-off value is almost at the limit of this class of planer-gate IGBT.

[1]  Masahito Otsuki,et al.  The 3rd generation IGBT toward a limitation of IGBT performance , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[2]  Y. Seki,et al.  The IGBT with monolithic overvoltage protection circuit , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.