C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
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Seikoh Yoshida | Sadahiro Kato | Yoshihiro Satoh | H. Sasaki | S. Yoshida | Y. Satoh | S. Kato | Iwami Masayuki | Hitoshi Sasaki | Iwami Masayuki
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