论文信息 - Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) - 字舞流文

Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

S. Denbaars | U. Mishra | E. Hu | I. Ben-Yaacov | Yee-Kwang Seck

[1] Umesh K. Mishra,et al. Kilovolt AlGaN/GaN HEMTs as Switching Devices , 2001 .

[2] H. Amano,et al. Mass transport and the reduction of threading dislocation in GaN , 2000 .

[3] S. Denbaars,et al. High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage , 2000 .

[4] Oliver Ambacher,et al. Growth and applications of Group III-nitrides , 1998 .

[5] W. Frensley,et al. Power-limiting breakdown effects in GaAs MESFET's , 1981, IEEE Transactions on Electron Devices.