Physics-based hot-carrier degradation model for SiGe HBTs

We present hot-carrier degradation analysis for SiGe heterojunction bipolar transistors based on deterministic solutions of the Boltzmann transport equations for a coupled system of electrons and holes. The full-band transport model provides the distribution function of the charge carriers interacting with the passivated Si-H bonds along the Si/SiO2 interface. Investigation of the density of hot carriers along the emitter-base spacer oxide interface asserts the significant role of hot holes in the long-term degradation of SiGe HBTs under DC mixed-mode stress conditions. The creation of interface trap states by hot carriers is calculated by an energy-driven microscopic model. These traps increase the forward base current via Shockley-Read-Hall recombination and degrade the overall device performance.

[1]  Christoph Jungemann,et al.  A deterministic solver for the Langevin Boltzmann equation including the Pauli principle , 2007, SPIE International Symposium on Fluctuations and Noise.

[2]  Karl Rupp,et al.  Predictive Hot-Carrier Modeling of n-Channel MOSFETs , 2014, IEEE Transactions on Electron Devices.

[3]  Thomas Zimmer,et al.  Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit , 2015, Microelectron. Reliab..

[4]  Karl Hess,et al.  A Multi-Carrier Model for Interface Trap Generation , 2002 .

[5]  G. G. Fischer,et al.  Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions , 2015, Microelectron. Reliab..

[6]  J. D. Cressler,et al.  Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs , 2012, IEEE Transactions on Electron Devices.

[7]  C. Jungemann,et al.  An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion , 2011, IEEE Transactions on Electron Devices.

[8]  James H. Stathis,et al.  Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films , 2001 .

[9]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[10]  K. Stokbro,et al.  STM-Induced Hydrogen Desorption via a Hole Resonance , 1998, cond-mat/9802304.

[11]  T. Grasser,et al.  A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation , 2016, Journal of computational electronics.

[12]  Christoph Jungemann,et al.  Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle , 2006 .

[13]  Tibor Grasser,et al.  Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs , 2016, IEEE Electron Device Letters.

[14]  Peng Cheng,et al.  Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling , 2009, IEEE Transactions on Device and Materials Reliability.

[15]  C. Jungemann,et al.  Avalanche breakdown of pn-junctions — Simulation by spherical harmonics expansion of the Boltzmann transport equation , 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).