Studies on fabrication and characterization of a ZnO/p-Si-based solar cell

Abstract A kind of solar cell with the n-ZnO/p-Si hetero-junction interface structure has been fabricated by using DC magnetron sputtering, and its photovoltaic (PV) property is investigated by using the current–voltage ( I – V ) measurement under AM 1.5 illumination. The light I – V curves show a strong bias-dependent change and the photo-electric conversion efficiencies in the range of 0.7–1.14% have been achieved. The largest values of open circuit voltage ( V o c ) and short circuit current ( J s c ) were about 400 mV and 17.27 mA/cm 2 , respectively. The crossover behavior of the dark and light I – V curves suggests that the recombination current arising from the interface states contributes to the bias dependence of the light I – V curve. The Si 2p spectra at the interface of ZnO/p-Si confirm the complexity of the interface quality and the existence of a large number of interface states. The bend behavior arising from the back contact barrier and the series resistance up to 50 Ω obtained from the dark I – V curve are also confirmed to be the crucial factors for achieving a good performance of the ZnO/p-Si-based solar cell.

[1]  D. Luh,et al.  Statistical Cross-Linking at the Si(111)/SiO{sub 2} Interface , 1997 .

[2]  K. Yoon,et al.  Understanding of a-Si: H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction , 2009 .

[3]  A. Ashour,et al.  ZnO/Si solar cell fabricated by spray pyrolysis technique , 2006 .

[4]  Y. Nakato,et al.  Zinc oxide/n‐Si junction solar cells produced by spray‐pyrolysis method , 1995 .

[5]  M. Burgelman,et al.  Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells. , 1997 .

[6]  D. Muñoz,et al.  Surface recombination analysis in silicon-heterojunction solar cells , 2010 .

[7]  A. Aberle,et al.  Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application , 2002 .

[8]  Wyatt K. Metzger,et al.  The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells , 2009 .

[9]  A. Kapoor,et al.  A new method to determine the diode ideality factor of real solar cell using Lambert W-function , 2005 .

[10]  A. Kapoor,et al.  Determination of the solar cell junction ideality factor using special trans function theory (STFT) , 2009 .

[11]  N. Kavasoğlu,et al.  Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device , 2009 .

[12]  D. G. Baik,et al.  Application of sol-gel derived films for ZnO/n-Si junction solar cells , 1999 .

[13]  N. Kavasoğlu,et al.  A new method of diode ideality factor extraction from dark I-V curve , 2009 .

[14]  Takao Ishida,et al.  Increases in photovoltage of ‘‘indium tin oxide/silicon oxide/mat‐textured n‐silicon’’ junction solar cells by silicon preoxidation and annealing processes , 1993 .

[15]  David P. Norton,et al.  Recent progress in processing and properties of ZnO , 2003 .

[16]  Qinglei Meng,et al.  Influence of growth conditions on photovoltaic effect of ZnO/Si heterojunction , 2008 .