III-nitride nanostructures for optical gas detection and pH sensing
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Martin Eickhoff | Eva Monroy | Sumit Paul | Konrad Maier | Aparna Das | Florian Furtmayr | Andreas Helwig | Jörg Teubert | Gerhard Müller | M. Eickhoff | Aparna Das | E. Monroy | A. Helwig | G. Müller | K. Maier | F. Furtmayr | S. Paul | J. Teubert
[1] Eva Monroy,et al. Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy , 2003 .
[2] Y. Kotsar,et al. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy , 2011 .
[3] C. G. Zoski. Handbook of Electrochemistry , 2006 .
[4] Martin Eickhoff,et al. Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes , 2003 .
[5] M. Eickhoff,et al. GaN nanodiscs embedded in nanowires as optochemical transducers , 2011, Nanotechnology.
[6] Martin Eickhoff,et al. Opto-chemical sensor system for the detection of H2 and hydrocarbons based on InGaN/GaN nanowires , 2012 .
[7] Andreas Offenhäusser,et al. Recording of cell action potentials with AlGaN∕GaN field-effect transistors , 2005 .
[8] Chien-Chih Lai,et al. Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells , 2003 .
[9] M. Stutzmann,et al. Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors , 2006 .
[10] Michael Heuken,et al. Comparison of the Mechanism of Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVD , 2000 .
[11] Poul Georg Moses,et al. Band bowing and band alignment in InGaN alloys , 2010 .
[12] M. Stutzmann,et al. Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping , 2008 .
[13] Lester F. Eastman,et al. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures , 2003 .
[14] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[15] Lester F. Eastman,et al. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors , 2003 .
[16] M. Stutzmann,et al. AlxGa1–xN—A New Material System for Biosensors , 2003 .
[17] Martin Eickhoff,et al. Bias-enhanced optical pH response of group III-nitride nanowires. , 2012, Nano letters.
[18] D. Kim,et al. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays , 2004 .
[19] Hadis Morkoç,et al. Nitride Semiconductor Devices: Fundamentals and Applications , 2013 .
[20] Eva Monroy,et al. Stranski-Krastanow growth of "112 ¯ 2…-oriented GaN/AlN quantum dots , 2009 .
[21] Martin Eickhoff,et al. Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage , 2009 .
[22] Martin Eickhoff,et al. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications , 2003 .