Effect of bake/cure temperature of an advanced organic ultra low-k material on the interface adhesion strength to metal barriers
暂无分享,去创建一个
Marianna Pantouvaki | Kris Vanstreels | Patrick Verdonck | Mikhail R. Baklanov | Thierry Conard | K. Nakatani | T. Conard | K. Vanstreels | M. Pantouvaki | P. Verdonck | M. Baklanov | Yukiharu Ono | Abdelkarim Ferchichi | Mihoko Matsutani | K. Nakatani | A. Ferchichi | Y. Ono | M. Matsutani
[1] M. Baklanov,et al. The mechanism of low-k SiOCH film modification by oxygen atoms , 2010 .
[2] G. Beyer,et al. Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure , 2007 .
[3] S. Mhaisalkar,et al. Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface , 2006 .
[4] Jen‐Sue Chen,et al. Dependence of Cu ∕ Ta – N ∕ Ta Metallization Stability on the Characteristics of Low Dielectric Constant Materials , 2005 .
[5] Karen Maex,et al. Low dielectric constant materials for microelectronics , 2003 .
[6] N. Lee,et al. The interface formation and adhesion of metals (Cu, Ta, and Ti) and low dielectric constant polymer-like organic thin films deposited by plasma-enhanced chemical vapor deposition using para-xylene precursor , 2000 .
[7] M. R. Baklanov,et al. Determination of pore size distribution in thin films by ellipsometric porosimetry , 2000 .
[8] Michael Lane,et al. Adhesion and debonding of multi-layer thin film structures , 1998 .
[9] J. McDonald,et al. Chemical interactions at Ta/fluorinated polymer buried interfaces , 1998 .
[10] Q. Ma,et al. A four-point bending technique for studying subcritical crack growth in thin films and at interfaces , 1997 .