论文信息 - Influence of Fluorinated Gate Oxides on the Low Frequency Noise of MOS Transistors under Analog Operation

Influence of Fluorinated Gate Oxides on the Low Frequency Noise of MOS Transistors under Analog Operation

The Ilf-noise amplitudes. of pand n MOSFETs are investigated under biasing conditions relevant. for analog circuit operation. Significant improvement of the noise performance for both pand n-MOSFETs was found by doping the gates of the devices with fluorine.

[1] T. P. Ma,et al. Metal–oxide–semiconductor gate oxide reliability and the role of fluorine , 1992 .

[2] A. Abidi,et al. Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures , 1994 .

[3] I. Lundström,et al. Low frequency noise in MOS transistors—I Theory , 1968 .

[4] Y. Nishioka,et al. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/ , 1988, IEEE Electron Device Letters.

[5] G. Li,et al. Consideration of low-frequency noise in MOSFETs for analog performance , 1996, IEEE Electron Device Letters.

[6] Jean Brini,et al. Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors , 1998 .

[7] Y. Nemirovsky,et al. 1/f noise in CMOS transistors for analog applications , 1996, Proceedings of 19th Convention of Electrical and Electronics Engineers in Israel.

[8] M. Shoji,et al. Analysis of high-frequency thermal noise of enhancement mode MOS field-effect transistors , 1966 .

[9] L.K.J. Vandamme,et al. Bulk and surface 1/f noise , 1989 .

[10] I. Lindau,et al. Semiconductor surface physics research in the Space Shuttle orbit , 1977 .