(Ba 0.75 Sr 0.25 )TiO 3 (BST) has been prepared at 520°C in thin-film form by pulsed laser deposition and shows a large temperature coefficient of dielectric constant (TCD) adequate for application in a dielectric bolometer imager. Pixels of capacitance-capacitance (C-C) balanced BST thin-film microbolometers have also been fabricated by integrating Si-bulk micromachining and ferroelectric thin-film processing. The film shows bolometric behavior with TCD values of 1%/K, which is much lower than that in bulk, but chopperless operation of pixels of microbolometers so fabricated was confirmed. Finally, the dielectric bolometer (DB)-mode operation in the detector pixel was confirmed for the integrated device structure, and the resultant voltage sensitivity (R v ) and specific detectivity (D * ) were observed and calculated to be about 0.8 kV/W and 1.6 x 10 8 cmHz 1/2 /W with a noise voltage (V n ) of 100 nV, respectively, when the detector size was 200 μm square and the top IR absorber was Au-black.