Imaging highly confined modes in sub-micron scale silicon waveguides using Transmission-based Near-field Scanning Optical Microscopy.

We demonstrate a new technique for high resolution imaging of near field profiles in highly confining photonic structures. This technique, Transmission-based Near-field Scanning Optical Microscopy (TraNSOM), measures changes in transmission through a waveguide resulting from near field perturbation by a scanning metallic probe. Using this technique we compare different mode polarizations and measure a transverse optical decay length of lambda/15 in sub-micron Silicon On Insulator (SOI) waveguides. These measurements compare well to theoretical results.

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