Full Adder Circuit Design Using Lateral Gate-All-Around (LGAA) FETs Based on BSIM-CMG Mode

The Gate-All-Around (GAA) FET device structure is expected to become the next widely used evolution of FET architecture in the near future. In this paper, full-adder datapath circuits using Lateral GAA FETs (LGAA FETs) based on BSIMCMG model are analyzed. Full adder designs include minimum count (10 transistor) adders such as 13A adder, the SERF adder, the CLRCL adder as well as the standard mirror adder and Ultra-Low-Power Full Adder (ULPFA). To better characterize the operation of LGAA FETs, their performance is compared against multi-gate FinFETs, such as double-gate FinFETs, triple-gate FinFETs and quadruple-gate FinFETs.

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