论文信息 - Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs - 字舞流文

Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

U. Konig | T. Hackbarth | M. Myronov | D. Leadley | E. Parker | O. Mironov | H. Herzog | S. Durov | G. Hock