Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films
暂无分享,去创建一个
Yuhong Huang | F. Ma | Tianwei Zhang | K. Xu | Weilin Zhang
[1] D. Fang,et al. Reducing diffusion-induced stresses of electrode–collector bilayer in lithium-ion battery by pre-strain , 2013 .
[2] M. Kurosawa,et al. Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C) , 2013 .
[3] Fuqian Yang. Effect of diffusion-induced bending on diffusion-induced stress near the end faces of an elastic hollow cylinder , 2013 .
[4] Ji-Su Ahn,et al. Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization , 2013 .
[5] T. Suemasu,et al. Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization , 2013 .
[6] S. Dai,et al. Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si , 2013, Journal of Materials Science: Materials in Electronics.
[7] D. Fang,et al. Tailoring diffusion-induced stresses of core-shell nanotube electrodes in lithium-ion batteries , 2013 .
[8] A. Aberle,et al. Crystalline silicon growth in the aluminium-induced glass texturing process , 2012 .
[9] L. Gu,et al. Real-time visualization of convective transportation of solid materials at nanoscale. , 2012, Nano letters.
[10] B. Ahn,et al. Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing , 2012 .
[11] D. He,et al. Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization , 2012 .
[12] T. Hsueh,et al. Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon , 2012 .
[13] T. Suemasu,et al. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization , 2012 .
[14] C. Shek,et al. Al-induced crystallization of amorphous Ge and formation of fractal Ge micro-/nanoclusters. , 2012, Inorganic chemistry.
[15] Min Chen,et al. Surface layering-induced crystallization of Ni–Si alloy drops , 2012 .
[16] D. He,et al. Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization , 2012 .
[17] P. Chu,et al. Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe , 2012 .
[18] Jie Sun,et al. Ni-Induced Lateral Fast Crystallization of Amorphous Silicon Film by Microwave Annealing , 2011 .
[19] L. Wang,et al. Low-Temperature Ni Acetate Induced Crystallization of a-Si Thin Film by Microwave Annealing , 2011 .
[20] M. Kurosawa,et al. Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process , 2011 .
[21] P. McIntyre,et al. Interface-controlled layer exchange in metal-induced crystallization of germanium thin films , 2010 .
[22] J. Schneider,et al. A kinetic simulation study of the mechanisms of aluminum induced layer exchange process , 2010 .
[23] L. Jeurgens,et al. Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers. , 2009, Journal of nanoscience and nanotechnology.
[24] C. Detavernier,et al. In situ x-ray diffraction study of metal induced crystallization of amorphous germanium , 2009 .
[25] M. Stutzmann,et al. Silver-induced layer exchange for the low-temperature preparation of intrinsic polycrystalline silicon films , 2009 .
[26] C. Detavernier,et al. In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon , 2008 .
[27] Zumin Wang,et al. Investigation of metal‐induced crystallization in amorphous Ge/crystalline Al bilayers by Auger microanalysis and selected‐area depth profiling , 2008 .
[28] D. He,et al. Au-induced crystallization of hydrogenated amorphous Si1−xGex (0.2 ≤ x ≤ 1) thin films with chemical source at low temperature , 2008 .
[29] Zumin Wang,et al. Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems: experiments and calculations on Al/a-Ge and Al/a-Si bilayers , 2008 .
[30] A. Slaoui,et al. Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminium-induced crystallization , 2007 .
[31] Zumin Wang,et al. ¿Explosive¿ crystallisation of amorphous germanium in Ge/Al layer systems; comparison with Si/Al layer systems , 2006 .
[32] Young‐Chang Joo,et al. In situ study of stress relaxation mechanisms of pure Al thin films during isothermal annealing , 2006 .
[33] S. H. Lee,et al. Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface , 2002 .
[34] T. Koyama,et al. Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate , 2001 .
[35] O. Nast,et al. Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon , 2000 .
[36] F. Aldinger,et al. Thermodynamic calculation of the ternary system Al-Si-C , 1996 .
[37] R. Sinclair,et al. Metal-mediated crystallization of amorphous silicon in silicon-silver layered systems , 1995 .
[38] R. Sinclair,et al. Metal-contact-induced crystallization of semiconductors , 1994 .
[39] T. Kikukawa,et al. Growth dynamics of fractal Ge clusters during crystallization of amorphous phase on polycrystalline Au layer , 1994 .
[40] G. Ottaviani,et al. Crystallization of Ge and Si in metal films. I , 1974 .
[41] Hsin-yi Lee,et al. Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films , 2011, Journal of Electronic Materials.