Graphene-Si Schottky IR Detector
暂无分享,去创建一个
J. Stake | F. Raissi | O. Habibpour | J. Vukusic | F. Raissi | M. Amirmazlaghani | J. Stake | O. Habibpour | J. Vukusic | M. Amirmazlaghani
[1] N. Peres,et al. Fine Structure Constant Defines Visual Transparency of Graphene , 2008, Science.
[2] A. Ferrari,et al. Graphene Photonics and Optoelectroncs , 2010, CLEO 2012.
[3] Antoni Rogalski,et al. Narrow-Gap Semiconductors for Infrared Detectors , 2011 .
[4] Yi Jia,et al. Graphene‐On‐Silicon Schottky Junction Solar Cells , 2010, Advanced materials.
[5] F. Guinea,et al. The electronic properties of graphene , 2007, Reviews of Modern Physics.
[6] V. Ryzhii,et al. Terahertz and Infrared Photodetection Using p-i-n Multiple-Graphene-Layer Structures * , 2009, Graphene-Based Terahertz Electronics and Plasmonics.
[7] F. Xia,et al. Photocurrent imaging and efficient photon detection in a graphene transistor. , 2009, Nano letters.
[8] D. Veksler,et al. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible , 2008, 0801.3302.
[9] V. E. Vickers,et al. Model of schottky barrier hot-electron-mode photodetection. , 1971, Applied Optics.
[10] F. Xia,et al. Graphene photodetectors for high-speed optical communications , 2010, 1009.4465.
[11] M. M. Far,et al. Highly sensitive PtSi/porous Si Schottky detectors , 2002 .
[12] Gianlorenzo Masini,et al. 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm , 2003 .
[13] Chemical Doping and Enhanced Solar Energy Conversion of Graphene/Silicon Junctions , 2010, 1012.5730.
[14] V. Ryzhii,et al. Characteristics of p–i–n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures , 2011 .
[15] F. Raissi. A possible explanation for high quantum efficiency of PtSi/porous Si Schottky detectors , 2003 .
[16] Jiwoong Park,et al. Imaging of photocurrent generation and collection in single-layer graphene. , 2009, Nano letters.
[17] Takashi Taniguchi,et al. Hot Carrier–Assisted Intrinsic Photoresponse in Graphene , 2011, Science.
[18] J. Silverman,et al. The theory of hot-electron photoemission in Schottky-barrier IR detectors , 1985, IEEE Transactions on Electron Devices.
[19] C. Berger,et al. Ultrafast Relaxation of Excited Dirac Fermions in Epitaxial Graphene Using Optical Differential Transmission Spectroscopy , 2008 .
[20] A. M. van der Zande,et al. Photo-thermoelectric effect at a graphene interface junction. , 2009, Nano letters.
[21] Vikram L. Dalal,et al. Simple Model for Internal Photoemission , 1971 .
[22] G. Assanto,et al. Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors , 2007, IEEE Photonics Technology Letters.
[23] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[24] V. Ryzhii,et al. Analytical Device Model for Graphene Bilayer Field-Effect Transistors Using Weak Nonlocality Approximation * , 2010, Graphene-Based Terahertz Electronics and Plasmonics.
[25] Farhan Rana,et al. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. , 2008, Nano letters.
[26] Hongkun Park,et al. Gate-activated photoresponse in a graphene p-n junction. , 2010, Nano letters.
[27] Sukosin Thongrattanasiri,et al. Complete optical absorption in periodically patterned graphene. , 2012, Physical review letters.
[28] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[29] Chia-Chi Chang,et al. Graphene-silicon Schottky diodes. , 2011, Nano letters.
[30] Kazumi Wada,et al. Monolithic Silicon Microphotonics , 2004 .
[31] F. Xia,et al. Ultrafast graphene photodetector , 2009, CLEO/QELS: 2010 Laser Science to Photonic Applications.
[32] N. Xi,et al. Uncooled infrared sensing using graphene , 2011, 2011 IEEE Nanotechnology Materials and Devices Conference.
[33] Huili Grace Xing,et al. Efficient terahertz electro-absorption modulation employing graphene plasmonic structures , 2012 .
[34] G. Coppola,et al. Near-Infrared All-Silicon Photodetectors , 2012 .
[35] W. Knap,et al. Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects , 2011 .