论文信息 - Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures - 字舞流文

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski | A. Zukauskas | S. Juršėnas | K. Kazlauskas | E. Goldys | R. Bożek | S. Figge | D. Hommel | T. Böttcher | M. Phillips | E. Łusakowska | V. Ivanov | S. Miasojedovas