Wideband CMOS high-Q 2-port active inductor using parallel LC resonance Circuit

This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprises of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor due to decrease of the parasitic capacitances and extend high-Q operating frequency range. For an experimental validation, the 2-port active inductor was fabricated wit 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2 nH and Q-factor higher than 35 in the frequency range of 3 ∼ 10 GHz.

[1]  J. Mao,et al.  A new floating active inductor using resistive Feedback Technique , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[2]  Apinunt Thanachayanont.  CMOS transistor-only active inductor for IF/RF applications , 2002, 2002 IEEE International Conference on Industrial Technology, 2002. IEEE ICIT '02..

[3]  K. Mouthaan,et al.  Lossless CMOS active reciprocal two-port inductor and application in a series LC filter , 2012, 2012 42nd European Microwave Conference.

[4]  G.F. Zhang,et al.  Broad-band, lossless monolithic microwave active floating inductor , 1993, IEEE Microwave and Guided Wave Letters.

[5]  Jae W. Lee,et al.  High quality-factor and inductance of symmetric differential-pair structure active inductor using a feedback resistance design , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[6]  Yongchae Jeong,et al.  Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[7]  Behzad Razavi,et al.  Stacked inductors and transformers in CMOS technology , 2001 .