Transparent thin-film transistors with zinc indium oxide channel layer

High mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO) channel layer are reported. Such devices are highly transparent with ∼85% optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600 °C operate in depletion-mode with threshold voltages −20 to −10V and turn-on voltages ∼3V less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of 45–55cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.8V∕decade. In contrast, ZIO TTFTs annealed at 300 °C typically operate in enhancement-mode with threshold voltages of 0–10V and turn-on voltages 1–2V less than the threshold voltage. These 300 °C devices exhibit excellent drain–current saturation, peak incremental channel mobilities of 10–30cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.3V∕decade. ZIO TTFTs with the channel layer deposited ne...

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