Scaling Behavior of In0.7Ga0.3As HEMTs for Logic

We have experimentally investigated the impact of lateral and vertical scaling of In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs on their logic performance. Reducing the In<sub>0.52</sub>Al<sub>0.48</sub>As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V<sub>T</sub> = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of I<sub>ON</sub>/I <sub>OFF</sub> = 10<sup>3</sup>, we obtain CV/I = 0.85 ps at V<sub>cc </sub> = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS