0.18 μm 3-6 GHz CMOS broadband LNA for UWB radio

A 3–6 GHz CMOS broadband low noise amplifier (LNA) for ultra-wideband (UWB) radio is presented. The LNA is fabricated with the 0.18 µm 1P6M standard CMOS process. Measurement of the CMOS LNA is performed using an FR-4 PCB test fixture. From 3 to 6 GHz, the broadband LNA exhibits a noise figure of 4.7–6.7 dB, a gain of 13–16 dB, and an input/output return loss higher than 12/10 dB, respectively. The input P1 dB and input IP3 (IIP3) at 4.5 GHz are about −14 and −5 dBm, respectively. The DC supply is 1.8 V.

[1]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[2]  A. Bevilacqua,et al.  An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[3]  G. Gonzalez.  Microwave Transistor Amplifiers: Analysis and Design , 1984 .

[4]  K. Siwiak,et al.  Ultra-wide band radio: the emergence of an important new technology , 2001, IEEE VTS 53rd Vehicular Technology Conference, Spring 2001. Proceedings (Cat. No.01CH37202).

[5]  Sang-Gug Lee,et al.  An ultra-wideband CMOS low noise amplifier for 3-5-GHz UWB system , 2005 .

[6]  R. Gharpurey.  A broadband low-noise front-end amplifier for ultra wideband in 0.13-/spl mu/m CMOS , 2004, IEEE Journal of Solid-State Circuits.