论文信息 - 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

A 1.3-/spl mu/m continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications.

[1] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .

[2] H. Ishikawa,et al. Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate , 1994, IEEE Photonics Technology Letters.

[3] Rajaram Bhat,et al. High-Performance Uncooled 1.3-pm AlxGayIn 1 - Ix: - As/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications , 1994 .

[4] Rajaram Bhat,et al. High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications , 1994 .

[5] T. Kitatani,et al. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance , 1996 .

[6] E. Kane,et al. Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass" , 1986 .

[7] Y. Osawa,et al. Room-temperature pulsed operation of 1.3 /spl mu/m GaInNAs/GaAs laser diode , 1997 .

[8] Kazuhiko Hosomi,et al. Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source , 1994 .