Resistance random access memory

PURPOSE: A resistive random access memory device is provided to prevent sneak path problem by using a thin film structure which directly connects a bi-directional switching layer on a resistance change layer. CONSTITUTION: A first electrode(10) is formed on a thin film layer(20). The thin film layer includes a resistance change layer and a switching layer which are connected with each other. The resistance change layer includes materials with bipolar resistance switching characteristics. The switching layer includes materials with bi-directional switching characteristics. The thin film layer is formed on a second electrode(30).