Jiafei Yao

发表

Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path

Yufeng Guo, Tao Tian, Jiafei Yao, 2019, IEEE Journal of the Electron Devices Society.

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2020, IEEE Journal of the Electron Devices Society.

A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout

David Z. Pan, Yufeng Guo, Jiafei Yao, 2018, IEEE Transactions on Electron Devices.

Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

Yufeng Guo, Jiafei Yao, Man Li, 2015 .

Analysis of Interface Properties in AlGaN/GaN MIS-HEMTs with HfO2 and SiNx Gate Dielectric

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2020, 2020 10th International Conference on Power and Energy Systems (ICPES).

Analytical Model for the SOI Lateral Power Device With Step Width Technique and High- ${k}$ Dielectric

Yufeng Guo, Jiafei Yao, Jun Zhang, 2019, IEEE Transactions on Electron Devices.

Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate

David Z. Pan, Yufeng Guo, Jiafei Yao, 2018, IEEE Transactions on Electron Devices.

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2021, Micromachines.

Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2020 .

High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction

Jiafei Yao, Jun Zhang, Zeng Liu, 2022 .

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

J. Chen, Yufeng Guo, Jiafei Yao, 2020, Nanoscale Research Letters.

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Yufeng Guo, Jiafei Yao, Jun Zhang, 2020, IEEE Journal of the Electron Devices Society.

β-Ga2O3-Based Power Devices: A Concise Review

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, Crystals.

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

Yufeng Guo, Jiafei Yao, Jun Zhang, 2023, Micromachines.

Double Dielectrics Enhancement on the Ldmos Using High-K Field Dielectric and Low-K Buried Dielectric

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, SSRN Electronic Journal.

SOI LDMOS With High-k Multi-Fingers to Modulate the Electric Field Distributions

Yufeng Guo, Jiafei Yao, Jun Zhang, 2023, IEEE Transactions on Electron Devices.

Equivalent model and limit for the SOI lateral power device using high-k dielectric

Yufeng Guo, Jiafei Yao, Kemeng Yang, 2019 .

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Bo Zhang, Yufeng Guo, Jiafei Yao, 2015, IEEE Electron Device Letters.

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

Yufeng Guo, Jiafei Yao, Kemeng Yang, 2020 .

Novel silicon-on-insulator lateral power device with step width drift region

Yufeng Guo, Jiafei Yao, Jun Zhang, 2015 .

Novel high-voltage LDMOS with linear graded drift region width

Yufeng Guo, Jiafei Yao, Jun Zhang, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Novel LDMOS With Integrated Triple Direction High-k Gate and Field Dielectrics

Yufeng Guo, Jiafei Yao, Man Li, 2021, IEEE Transactions on Electron Devices.

Performance Variability, Switching Mechanism, and Physical Model for Oxide Based Memristor and RRAM Device

Jiafei Yao, Yi Tong, Fei Gao, 2018, 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Breakdown Characteristics of Ga 2 O 3 -on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

L. Wang, Jiafei Yao, Kemeng Yang, 2023 .

The Role of Even Longitudinal Electric Field Distribution in Optimizing Carrier Transport Efficiency of Field-Effect Transistors

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, SSRN Electronic Journal.

A novel substrate Voltage-assisted RESURF technique in SOI LDMOS with a heavily doped drift region

Jiafei Yao, Jun Zhang, Man Li, 2023, Solid-State Electronics.

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, Micromachines.

Novel Bulk Silicon Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region

Yufeng Guo, Jiafei Yao, Jun Zhang, 2013 .

Avalanche-like breakdown behavior of copolymer organic semiconductor-based Schottky junction structure

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, Applied Physics Letters.

A 2.2kV Organic Semiconductor- Based Lateral Power Device

Yufeng Guo, Jing Chen, Jiafei Yao, 2022, IEEE Electron Device Letters.

A Novel Prediction Technology of Output Characteristics for IGBT Based on Compact Model and Artificial Neural Networks

Yufeng Guo, Jiafei Yao, Jun Zhang, 2023, IEEE Transactions on Electron Devices.

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

Yufeng Guo, Jiafei Yao, Jun Zhang, 2022, Micromachines.

A New Physical Insight for the 3-D-Layout-Induced Cylindrical Breakdown in Lateral Power Devices on SOI Substrate

Jun Zhang, Yufeng Guo, Jiafei Yao, 2018, IEEE Transactions on Electron Devices.

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

Yufeng Guo, Jiafei Yao, Jun Zhang, 2024, Applied Physics Letters.