High-Throughput Design of Non-oxide p-Type Transparent Conducting Materials: Data Mining, Search Strategy, and Identification of Boron Phosphide
暂无分享,去创建一个
Gian-Marco Rignanese | Geoffroy Hautier | Anna Miglio | Viet-Anh Ha | Joel B. Varley | G. Rignanese | G. Hautier | Michiel J. van Setten | A. Miglio | J. Varley | Viet-Anh Ha
[1] Anubhav Jain,et al. Python Materials Genomics (pymatgen): A robust, open-source python library for materials analysis , 2012 .
[2] D. Hamann. Optimized norm-conserving Vanderbilt pseudopotentials , 2013, 1306.4707.
[3] Fang Liu,et al. Recent developments in the ABINIT software package , 2016, Comput. Phys. Commun..
[4] Kristin A. Persson,et al. Commentary: The Materials Project: A materials genome approach to accelerating materials innovation , 2013 .
[5] Hideo Hosono,et al. p-channel thin-film transistor using p-type oxide semiconductor, SnO , 2008 .
[6] A. Janotti,et al. Ambipolar doping in SnO , 2013 .
[7] Stefano Curtarolo,et al. High-throughput combinatorial database of electronic band structures for inorganic scintillator materials. , 2011, ACS combinatorial science.
[8] Alex Zunger,et al. Practical doping principles , 2003 .
[9] P. Gielisse,et al. Synthesis of single crystal boron phosphide , 1973 .
[10] Liping Yu,et al. Design and discovery of a novel half-Heusler transparent hole conductor made of all-metallic heavy elements , 2014, Nature Communications.
[11] B. Stone,et al. Semiconducting Properties of Cubic Boron Phosphide , 1960 .
[12] Cheol-hee Park,et al. p-Type conductivity in wide-band-gap BaCuQF (Q=S, Se) , 2003 .
[13] I. Sharp,et al. P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature , 2016 .
[14] Hideo Hosono,et al. P-type electrical conduction in transparent thin films of CuAlO2 , 1997, Nature.
[15] R. Palgrave,et al. Engineering Valence Band Dispersion for High Mobility p-Type Semiconductors , 2017 .
[16] C. Granqvist. Transparent conductors as solar energy materials: A panoramic review , 2007 .
[17] M. Iwami,et al. Crystal growth of boron mono-phosphide and its electrical and optical properties , 1975 .
[18] M. Shimode,et al. Fabrication of bipolar CuInO2 with delafossite structure , 2003 .
[19] Gian-Marco Rignanese,et al. High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening , 2016 .
[20] D. Keszler,et al. Transparent p-type conducting BaCu2S2 films , 2002 .
[21] Geoffroy Hautier,et al. Electronic structure and defect properties of B6O from hybrid functional and many-body perturbation theory calculations: A possible ambipolar transparent conductor , 2014 .
[22] A. Sleight. Chemistry of Band Structure Engineering , 2011 .
[23] H. Hosono,et al. Transparent p-type semiconductor: LaCuOS layered oxysulfide , 2000 .
[24] J. Woicik,et al. Origin of the Bipolar Doping Behavior of SnO from X-ray Spectroscopy and Density Functional Theory , 2013 .
[25] D. Ginley,et al. Handbook of transparent conductors , 2011 .
[26] Xavier Gonze,et al. A brief introduction to the ABINIT software package , 2005 .
[27] Gerbrand Ceder,et al. Identification and design principles of low hole effective mass p-type transparent conducting oxides , 2013, Nature Communications.
[28] E. Fortunato,et al. Transparent Conducting Oxides for Photovoltaics , 2007 .
[29] R. Egdell,et al. P-type transparent conducting oxides , 2016, Journal of physics. Condensed matter : an Institute of Physics journal.
[30] Gian-Marco Rignanese,et al. How Does Chemistry Influence Electron Effective Mass in Oxides? A High-Throughput Computational Analysis , 2014 .
[31] Electronic structure of BAs and boride III-V alloys , 2000, cond-mat/0009063.
[32] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[33] K. Ellmer. Past achievements and future challenges in the development of optically transparent electrodes , 2012, Nature Photonics.
[34] G. Kresse,et al. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .
[35] J. Robertson,et al. Limits to doping in oxides , 2011 .
[36] H. Hosono,et al. Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure , 2001 .
[37] D. Scanlon,et al. On the possibility of p-type SnO2 , 2012 .
[38] Wei Chen,et al. FireWorks: a dynamic workflow system designed for high‐throughput applications , 2015, Concurr. Comput. Pract. Exp..
[39] C. Freysoldt,et al. Fully ab initio finite-size corrections for charged-defect supercell calculations. , 2009, Physical review letters.
[40] G. Rignanese,et al. Influence of the “second gap” on the transparency of transparent conducting oxides: An ab initio study , 2016, 1603.04038.
[41] Claire J. Carmalt,et al. n-Type doped transparent conducting binary oxides: an overview , 2016 .
[42] David J. Singh,et al. BoltzTraP. A code for calculating band-structure dependent quantities , 2006, Comput. Phys. Commun..
[43] Y. Kumashiro. Refractory semiconductor of boron phosphide , 1990 .
[44] G. Kresse,et al. First-principles calculations for point defects in solids , 2014 .
[45] M. Takigawa,et al. Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system , 1974 .