Recent Progress in Phase-Change Memory Technology
暂无分享,去创建一个
Haralampos Pozidis | Evangelos Eleftheriou | Abu Sebastian | Nikolaos Papandreou | Jau-Yi Wu | SangBum Kim | Hsiang-Lan Lung | Huai-Yu Cheng | Geoffrey W. Burr | Matthew J. BrightSky | Chung Hon Lam | Norma E. Sosa | E. Eleftheriou | G. Burr | C. Lam | N. Papandreou | A. Sebastian | H. Pozidis | Sangbum Kim | H. Lung | M. BrightSky | N. Sosa | Huai-Yu Cheng | Jau-Yi Wu
[1] R. Jordan,et al. NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[2] Y. Leblebici,et al. Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power) , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[3] Eric Pop,et al. Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier. , 2015, Nano letters.
[4] Abu Sebastian,et al. Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices , 2015, IEEE Electron Device Letters.
[5] O. Richard,et al. A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[6] W. C. Chien,et al. A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[7] Victor Yi-Qian Zhuo,et al. Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[8] R. Degraeve,et al. Quantitative endurance failure model for filamentary RRAM , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[9] Hagop Nazarian,et al. Self-limited RRAM with ON/OFF resistance ratio amplification , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[10] Ryutaro Yasuhara,et al. Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[11] Alessandro Calderoni,et al. Challenges for high-density 16Gb ReRAM with 27nm technology , 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).
[12] Jiale Liang,et al. 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays , 2015, IEEE Transactions on Electron Devices.
[13] Thomas Parnell,et al. Phase Change Memory Reliability: A Signal Processing and Coding Perspective , 2015, IEEE Transactions on Magnetics.
[14] Haralampos Pozidis,et al. A collective relaxation model for resistance drift in phase change memory cells , 2015, 2015 IEEE International Reliability Physics Symposium.
[15] Haralampos Pozidis,et al. Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures , 2015, 2015 IEEE International Reliability Physics Symposium.
[16] Songlin Feng,et al. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon , 2015, Nanoscale Research Letters.
[17] Shuichi Murakami,et al. Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices , 2015, Science and technology of advanced materials.
[18] G. W. Burr,et al. Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element , 2015, 2014 IEEE International Electron Devices Meeting.
[19] M. Popescu,et al. In-situ crystallization of GeTe\GaSb phase change memory stacked films , 2014 .
[20] W. C. Chien,et al. A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications , 2014, 2014 IEEE International Electron Devices Meeting.
[21] S. Jo,et al. 3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector , 2014, 2014 IEEE International Electron Devices Meeting.
[22] F. Pellizzer,et al. Optimization metrics for Phase Change Memory (PCM) cell architectures , 2014, 2014 IEEE International Electron Devices Meeting.
[23] A. Benvenuti,et al. High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays , 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).
[24] Zhe Wu,et al. Considerations on highly scalable and easily stackable phase change memory cell array for low-cost and high-performance applications , 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
[25] New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films , 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
[26] P. Narayanan,et al. Access devices for 3D crosspoint memorya) , 2014 .
[27] S. Murakami,et al. Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices , 2014, Scientific Reports.
[28] Daniel Krebs,et al. Crystal growth within a phase change memory cell , 2014, Nature Communications.
[29] H. Wong,et al. A 1TnR array architecture using a one-dimensional selection device , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
[30] W. C. Chien,et al. Towards the integration of both ROM and RAM functions phase change memory cells on a single die for system-on-chip (SOC) applications , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
[31] M. H. Lee,et al. A double-density dual-mode phase change memory using a novel background storage scheme , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
[32] M. Tai,et al. 1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
[33] Epitaxial growth of Ge-Sb-Te films on KCl by high deposition rate pulsed laser deposition , 2014 .
[34] Jing Li,et al. 1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing , 2014, IEEE Journal of Solid-State Circuits.
[35] Jin Hwan Jeong,et al. Screened remote plasma-enhanced atomic vapor deposition of Sb–Te thin film for the improvement of trench-covering ability , 2014, Journal of Materials Science.
[36] S. G. Bishop,et al. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory , 2014 .
[37] R. Shenoy,et al. Ga46Sb54 Material for Fast Switching and Pb-Free Soldering Reflow Process Complying Phase-Change Memory , 2014 .
[38] S. Raoux,et al. Unusual crystallization behavior in Ga-Sb phase change alloys , 2013 .
[39] G. Reimbold,et al. Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory , 2013, 2013 IEEE International Electron Devices Meeting.
[40] C. M. Lin,et al. Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application , 2013, 2013 IEEE International Electron Devices Meeting.
[41] Unified reliability modeling of Ge-rich phase change memory for embedded applications , 2013, 2013 IEEE International Electron Devices Meeting.
[42] A. Pirovano,et al. Interface engineering for thermal disturb immune phase change memory technology , 2013, 2013 IEEE International Electron Devices Meeting.
[43] T. Yamamoto,et al. Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations , 2013, 2013 IEEE International Electron Devices Meeting.
[44] C. Lam,et al. A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer , 2013, 2013 IEEE International Electron Devices Meeting.
[45] E. Varesi,et al. Atomic migration in phase change materials , 2013, 2013 IEEE International Electron Devices Meeting.
[46] Chung Lam,et al. Experimental demonstration of array-level learning with phase change synaptic devices , 2013, 2013 IEEE International Electron Devices Meeting.
[47] Elisabetta Palumbo,et al. Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$ , 2013, IEEE Transactions on Electron Devices.
[48] Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching , 2013 .
[49] Matthias Wuttig,et al. Measurement of crystal growth velocity in a melt-quenched phase-change material , 2013, Nature Communications.
[50] J. Tominaga,et al. Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100−X/Sb2Te3 diluted superlattice system , 2013 .
[51] Hao Wu,et al. A PCM-based TCAM cell using NDR , 2013, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).
[52] T. Yamamoto,et al. Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications , 2013, 2013 Symposium on VLSI Technology.
[53] R. Degraeve,et al. Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation , 2013, 2013 Symposium on VLSI Technology.
[54] H. L. Lung,et al. A scalable volume-confined phase change memory using physical vapor deposition , 2013, 2013 Symposium on VLSI Technology.
[55] G. W. Burr,et al. Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) , 2013, 2013 Symposium on VLSI Technology.
[56] A. Sebastian,et al. Reliable MLC data storage and retention in phase-change memory after endurance cycling , 2013, 2013 5th IEEE International Memory Workshop.
[57] Geoffrey W. Burr,et al. Nanoscale electronic synapses using phase change devices , 2013, JETC.
[58] Scott C. Lewis,et al. A 256-Mcell Phase-Change Memory Chip Operating at $2{+}$ Bit/Cell , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.
[59] K. Nielsch,et al. Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition , 2013 .
[60] T. Morikawa. A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure , 2013 .
[61] Yong Liu,et al. Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems , 2013, IEEE Transactions on Electron Devices.
[62] L. Goux,et al. Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability , 2013, 2013 IEEE International Electron Devices Meeting.
[63] On the density of states of germanium telluride , 2012 .
[64] E. Souchier,et al. Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow , 2012, 2012 International Electron Devices Meeting.
[65] K. Virwani,et al. Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials , 2012, 2012 International Electron Devices Meeting.
[66] C. Chung,et al. Active Width Modulation (AWM) for cost-effective and highly reliable PRAM , 2012, 2012 International Electron Devices Meeting.
[68] Sasago Yoshitaka,et al. Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes , 2012 .
[69] Jacques-Olivier Klein,et al. Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches , 2012, 2012 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).
[70] K. Gopalakrishnan,et al. Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield , 2012, 2012 Symposium on VLSI Technology (VLSIT).
[71] Kumar Virwani,et al. Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5 , 2012 .
[72] A. Sebastian,et al. A Framework for Reliability Assessment in Multilevel Phase-Change Memory , 2012, 2012 4th IEEE International Memory Workshop.
[73] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[74] Stephen J. Hudgens,et al. Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits , 2012, Electronic Materials Letters.
[75] M. H. Lee,et al. Optimization of programming current on endurance of phase change memory , 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.
[76] C. Lam,et al. Resistance drift in phase change memory , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[77] Chung Lam,et al. The impact of melting during reset operation on the reliability of phase change memory , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[78] Qi Wang,et al. A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth , 2012, 2012 IEEE International Solid-State Circuits Conference.
[79] H.-S. Philip Wong,et al. Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage , 2011 .
[80] H. K. Kang,et al. PRAM cell technology and characterization in 20nm node size , 2011, 2011 International Electron Devices Meeting.
[81] H. L. Lung,et al. A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material , 2011, 2011 International Electron Devices Meeting.
[82] Olivier Bichler,et al. Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction , 2011, 2011 International Electron Devices Meeting.
[83] A. Sebastian,et al. Drift-resilient cell-state metric for multilevel phase-change memory , 2011, 2011 International Electron Devices Meeting.
[84] H.-S. Philip Wong,et al. Energy efficient programming of nanoelectronic synaptic devices for large-scale implementation of associative and temporal sequence learning , 2011, 2011 International Electron Devices Meeting.
[85] C. Chung,et al. Reliability perspectives for high density PRAM manufacturing , 2011, 2011 International Electron Devices Meeting.
[86] R. Dasaka,et al. A low power phase change memory using thermally confined TaN/TiN bottom electrode , 2011, 2011 International Electron Devices Meeting.
[87] K. S. Choi,et al. Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond , 2011, 2011 International Electron Devices Meeting.
[88] Haralampos Pozidis,et al. Non-resistance-based cell-state metric for phase-change memory , 2011 .
[89] Cheng-Yuan Wen,et al. Post-silicon calibration of analog CMOS using phase-change memory cells , 2011, 2011 Proceedings of the ESSCIRC (ESSCIRC).
[90] Kumar Virwani,et al. Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST , 2011 .
[91] Chilhee Chung,et al. Current status and future prospect of Phase Change Memory , 2011, 2011 9th IEEE International Conference on ASIC.
[92] Kumar Virwani,et al. Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices , 2011 .
[93] P Fons,et al. Interfacial phase-change memory. , 2011, Nature nanotechnology.
[94] Wei Xu,et al. A Time-Aware Fault Tolerance Scheme to Improve Reliability of Multilevel Phase-Change Memory in the Presence of Significant Resistance Drift , 2011, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.
[95] Chilhee Chung,et al. Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe , 2011, IEEE Electron Device Letters.
[96] Daniele Ielmini,et al. Physical origin of the resistance drift exponent in amorphous phase change materials , 2011 .
[97] J. Paramesh,et al. A non-volatile look-up table design using PCM (phase-change memory) cells , 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.
[98] M. Breitwisch,et al. A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.
[99] Jiale Liang,et al. A 1.4µA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.
[100] M. Breitwisch,et al. Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.
[101] Chung Lam,et al. Demonstration of CAM and TCAM Using Phase Change Devices , 2011, 2011 3rd IEEE International Memory Workshop (IMW).
[102] E. Eleftheriou,et al. Drift-Tolerant Multilevel Phase-Change Memory , 2011, 2011 3rd IEEE International Memory Workshop (IMW).
[103] Haralampos Pozidis,et al. Programming algorithms for multilevel phase-change memory , 2011, 2011 IEEE International Symposium of Circuits and Systems (ISCAS).
[104] Eric Pop,et al. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes , 2011, Science.
[105] J. Stickney,et al. Controlled Electrochemical Formation of GexSbyTez using Atomic Layer Deposition (ALD) , 2011 .
[106] The first principle computer simulation and real device characteristics of superlattice phase-change memory , 2010, 2010 International Electron Devices Meeting.
[107] C. Hagleitner,et al. Device, circuit and system-level analysis of noise in multi-bit phase-change memory , 2010, 2010 International Electron Devices Meeting.
[108] G. Reimbold,et al. N-doped GeTe as performance booster for embedded Phase-Change Memories , 2010, 2010 International Electron Devices Meeting.
[109] J. Moon,et al. Selective Epitaxial Growth of Silicon for Vertical Diode Application , 2010 .
[110] Dae Hong Ko,et al. TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes , 2010 .
[111] H.J. Kim,et al. Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F2 cell , 2010, 2010 Symposium on VLSI Technology.
[112] S.W. Nam,et al. High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications , 2010, 2010 Symposium on VLSI Technology.
[113] Parijat Dube,et al. Architectural design for next generation heterogeneous memory systems , 2010, 2010 IEEE International Memory Workshop.
[114] Chang Hua Siau,et al. A 0.13µm 64Mb multi-layered conductive metal-oxide memory , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).
[115] K. Gopalakrishnan,et al. Phase change memory technology , 2010, 1001.1164.
[116] Vijayalakshmi Srinivasan,et al. Enhancing lifetime and security of PCM-based Main Memory with Start-Gap Wear Leveling , 2009, 2009 42nd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).
[117] G. Servalli,et al. A 45nm generation Phase Change Memory technology , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[118] P. Zuliani,et al. Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[119] N. Righos,et al. A stackable cross point Phase Change Memory , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[120] M. Kund,et al. Nanosecond switching in GeTe phase change memory cells , 2009 .
[121] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[122] Mikko Heikkilä,et al. Atomic layer deposition of Ge2Sb2Te5 thin films , 2009 .
[123] M. Nardone,et al. Relaxation Oscillation in GST-Based Phase Change Memory Devices , 2009, 2009 IEEE International Memory Workshop.
[124] D. Ielmini,et al. Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling , 2009, IEEE Transactions on Electron Devices.
[125] Guido Torelli,et al. A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage , 2009, IEEE Journal of Solid-State Circuits.
[126] Shih-Hung Chen,et al. Phase-change random access memory: A scalable technology , 2008, IBM J. Res. Dev..
[127] Winfried W. Wilcke,et al. Storage-class memory: The next storage system technology , 2008, IBM J. Res. Dev..
[128] Y.J. Song,et al. Two-bit cell operation in diode-switch phase change memory cells with 90nm technology , 2008, 2008 Symposium on VLSI Technology.
[129] M. Breitwisch. Phase Change Memory , 2008, 2008 International Interconnect Technology Conference.
[130] Byung-Gil Choi,et al. A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput , 2008, IEEE Journal of Solid-State Circuits.
[131] B. Gleixner,et al. Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling , 2007 .
[132] D. Ielmini,et al. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation , 2007, 2007 IEEE International Electron Devices Meeting.
[133] Y.C. Chen,et al. Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory , 2007, 2007 IEEE International Electron Devices Meeting.
[134] M. Wuttig,et al. Phase-change materials for rewriteable data storage. , 2007, Nature materials.
[135] Byung Joon Choi,et al. Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug , 2007 .
[136] Kinam Kim,et al. Phase-Change Behavior of Stoichiometric Ge2Sb2Te5 in Phase-Change Random Access Memory , 2007 .
[137] M. Salinga,et al. Glass Transition and Crystallization in Phase Change Materials , 2007 .
[138] J. Kim,et al. Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology , 2006, 2006 International Electron Devices Meeting.
[139] Su Ahn. Phase Change Memory Reliability , 2006, IIRW 2006.
[140] Paolo Fantini,et al. Experimental investigation of transport properties in chalcogenide materials through 1∕f noise measurements , 2006 .
[141] Y. Sasago,et al. Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode , 2006, 2009 Symposium on VLSI Technology.
[142] Tow Chong Chong,et al. Phase change random access memory cell with superlattice-like structure , 2006 .
[143] D. Ielmini,et al. Impact of crystallization statistics on data retention for phase change memories , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[144] R. Bez,et al. 4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip , 2005, IEEE Journal of Solid-State Circuits.
[145] S.O. Park,et al. Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
[146] L. V. Pieterson,et al. Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview , 2005 .
[147] J. González-Hernández,et al. Structural, electric and kinetic parameters of ternary alloys of GeSbTe , 2005 .
[148] Guido Torelli,et al. 4-Mb MOSFET-selected μtrench phase-change memory experimental chip , 2005 .
[149] S.Y. Lee,et al. Writing current reduction for high-density phase-change RAM , 2003, IEEE International Electron Devices Meeting 2003.
[150] V. Weidenhof,et al. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements , 2000 .
[151] G. Bi,et al. Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type , 1998, The Journal of Neuroscience.
[152] N. Nobukuni,et al. Microstructural changes in GeSbTe film during repetitious overwriting in phase‐change optical recording , 1995 .
[153] N. Yamada,et al. Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory , 1991 .
[154] Noboru Yamada,et al. Te-Ge-Sn-Au Phase Change Recording Film For Optical Disk , 1987, Optics & Photonics.
[155] M. Chen,et al. Compound materials for reversible, phase‐change optical data storage , 1986 .
[156] M.R.J. Gibbs,et al. Activation energy spectra and relaxation in amorphous materials , 1983 .
[157] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .
[158] Rajeev Balasubramonian,et al. Handling PCM Resistance Drift with Device , Circuit , Architecture , and System Solutions , .